Improved particle control for high volume semiconductor manufacturing for nanoimprint lithography

Masami Yonekawa; Takahiro Nakayama; Kazuki Nakagawa; Toshihiro Maeda; Yoichi Matsuoka; Keiji Emoto; Hisanobu Azuma; Yukio Takabayashi; Ali Aghili; Makoto Mizuno; Jin Choi; Chris E. Jones

doi:10.1117/12.2279365

13 July 2017 Improved particle control for high volume semiconductor manufacturing for nanoimprint lithography

Masami Yonekawa, Takahiro Nakayama, Kazuki Nakagawa, Toshihiro Maeda, Yoichi Matsuoka, Keiji Emoto, Hisanobu Azuma, Yukio Takabayashi, Ali Aghili, Makoto Mizuno, Jin Choi, Chris E. Jones

Author Affiliations +

Proceedings Volume 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology; 104540R (2017) https://doi.org/10.1117/12.2279365
Event: Photomask Japan 2017, 2017, Yokohama, Japan

Abstract

Nanoimprint Lithography (NIL) has been shown to be an effective technique for replication of nano-scale features. Jet and Flash Imprint Lithography* (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are many criteria that determine whether a particular technology is ready for high volume semiconductor manufacturing. Included on the list are overlay, throughput and defectivity. Imprint lithography, like any lithographic approach requires that defect mechanisms be identified and eliminated in order to consistently yield a device. NIL has defect mechanisms unique to the technology, and they include liquid phase defects, solid phase defects and particle related defects. Especially more troublesome are hard particles on either the mask or wafer surface. Hard particles run the chance of creating a permanent defect in the mask, which cannot be corrected through a mask cleaning process. If Cost of Ownership (CoO) requirements are to be met, it is critical to minimize particle formation and extend mask life. To meet the CoO requirements, mask life must meet or exceed 1000 wafers. If, we make the conservative assumption that every particles causes damage to the mask pattern, the number of particle adders must be less than 0.001 pieces per wafer pass in the NIL tool. Therefore, aggressive strategies are needed to reduce particles in the tool. In this paper, we will report on the techniques required to meet this condition and will describe how the particle reduction techniques can be extended to our FPA-1200NZ2C system.

Citation Download Citation

Masami Yonekawa, Takahiro Nakayama, Kazuki Nakagawa, Toshihiro Maeda, Yoichi Matsuoka, Keiji Emoto, Hisanobu Azuma, Yukio Takabayashi, Ali Aghili, Makoto Mizuno, Jin Choi, and Chris E. Jones "Improved particle control for high volume semiconductor manufacturing for nanoimprint lithography", Proc. SPIE 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology, 104540R (13 July 2017); https://doi.org/10.1117/12.2279365

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available