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Proceedings Article

A compact optically pumped semiconductor laser emitting at 593 nm

[+] Author Affiliations
Ruediger von Elm

Coherent Lubeck GmbH (USA)

Soenke Offen, Joachim Brunn

Laserlabor (Germany)

Wolf Seelert, Vasiliy Ostroumov, Dirk Mohrenstecher

Coherent Lubeck GmbH (Germany)

Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79120G (February 15, 2011); doi:10.1117/12.879229
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From Conference Volume 7912

  • Solid State Lasers XX: Technology and Devices
  • W. Andrew Clarkson; Norman Hodgson; Ramesh Shori
  • San Francisco, California, USA | January 22, 2011

abstract

We achieved 100mW cw of 593nm by intracavity sum frequency generation in a branched cavity, dual laser set up. Two gain media were used: Nd:YVO4 for generating 1342nm, diode-pumped by 3.7W at 808nm, and an optically pumped semiconductor chip (OPS), designed for 1064nm emission, diode-pumped by 1.7W at 808nm. Due to the short upperstate lifetime of the OPS, the generated 593nm output power was stable.A

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Ruediger von Elm ; Soenke Offen ; Wolf Seelert ; Vasiliy Ostroumov ; Dirk Mohrenstecher, et al.
"A compact optically pumped semiconductor laser emitting at 593 nm", Proc. SPIE 7912, Solid State Lasers XX: Technology and Devices, 79120G (February 15, 2011); doi:10.1117/12.879229; http://dx.doi.org/10.1117/12.879229


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