Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

[+] Author Affiliations
Ching-Hsueh Chiu, Da-Wei Lin, Zhen-Yu Li, Hao-Chung Kuo, Tien-Chang Lu, Shing-Chung Wang

National Chiao Tung Univ. (Taiwan)

Shih-Chun Ling

National Chiao Tung Univ. (Taiwan) and Industrial Technology Research Institute (Taiwan)

Wei-Tasi Liao

Industrial Technology Research Institute (Taiwan)

Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi

Nagoya Univ. (Japan)

Nobuhiko Sawaki

Aichi Institute of Technology (Japan)

Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391X (March 03, 2011); doi:10.1117/12.876656
Text Size: A A A
From Conference Volume 7939

  • Gallium Nitride Materials and Devices VI
  • Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon
  • San Francisco, California | January 22, 2011

abstract

We present a study of semi-polar (1-101) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Ching-Hsueh Chiu ; Da-Wei Lin ; Zhen-Yu Li ; Shih-Chun Ling ; Hao-Chung Kuo, et al.
"Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 79391X (March 03, 2011); doi:10.1117/12.876656; http://dx.doi.org/10.1117/12.876656


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.