The development of monolithic alternating current light-emitting diode

Wen-Yung Yeh; Hsi-Hsuan Yen; Yi-Jen Chan

doi:10.1117/12.873668

3 March 2011 The development of monolithic alternating current light-emitting diode

Wen-Yung Yeh, Hsi-Hsuan Yen, Yi-Jen Chan

Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793910 (2011) https://doi.org/10.1117/12.873668
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

The monolithic alternating current light emitting diode (ACLED) has been revealed for several years and was regarded as a potential device for solid state lighting. In this study, we will discuss the characteristics, development status, future challenges, and ITRI's development strategy about ACLED, especially focusing on the development progress of the monolithic GaN-based Schottky barrier diodes integrated ACLED (SBD-ACLED). The SBD-ACLED design can not only improve the chip area utilization ratio but also provide much higher reverse breakdown voltage by integrating four SBDs with the micro-LEDs array in a single chip, which was regarded as a good on-chip ACLED design. According to the experimental results, higher chip efficiency can be reached through SBD-ACLED design since the chip area utilization ratio was increased. Since the principle and the operation condition of ACLED is quite different from those of the typical DCLED, critical issues for ACLED like the current droops, the flicker phenomenon, the safety regulations, the measurement standards and the power fluctuation have been studied for getting a practical and reliable ACLED design. Besides, the "AC LED application and research alliance" (AARA) lead by ITRI in Taiwan for the commercialization works of ACLED has also been introduced.

Citation Download Citation

Wen-Yung Yeh, Hsi-Hsuan Yen, and Yi-Jen Chan "The development of monolithic alternating current light-emitting diode", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793910 (3 March 2011); https://doi.org/10.1117/12.873668

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