Unified model for the GaN LED efficiency droop

Joachim Piprek

doi:10.1117/12.871105

3 March 2011 Unified model for the GaN LED efficiency droop

Joachim Piprek

Proceedings Volume 7939, Gallium Nitride Materials and Devices VI; 793916 (2011) https://doi.org/10.1117/12.871105
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

Nitride-based light-emitting diodes (LEDs) suffer from a reduction (droop) of the internal quantum efficiency with increasing injection current. This droop phenomenon is currently the subject of intense research worldwide, as it delays general lighting applications of GaN-based LEDs. Several proposals have been forwarded to explain the efficiency droop. Among the suggested droop mechanisms are defect-related recombination, Auger recombination, and electron leakage. However, different sample preparation and measurement conditions as well as the application of different models lead to a confusing and sometimes contradicting variety of efficiency droop observations and explanations. This paper combines different droop models in a simple yet unified framework and it helps to bring more clarity to the ongoing droop discussion.

Citation Download Citation

Joachim Piprek "Unified model for the GaN LED efficiency droop", Proc. SPIE 7939, Gallium Nitride Materials and Devices VI, 793916 (3 March 2011); https://doi.org/10.1117/12.871105

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