Variation of optical properties by the crystalline phase transition of polycrystalline silicon

Hidenori Iwata; Tomohiro Kita; Hirohito Yamada

doi:10.1117/12.874435

17 January 2011 Variation of optical properties by the crystalline phase transition of polycrystalline silicon

Hidenori Iwata, Tomohiro Kita, Hirohito Yamada

Proceedings Volume 7943, Silicon Photonics VI; 79431F (2011) https://doi.org/10.1117/12.874435
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

We studied a characteristics trimming technique in Si photonic-wire waveguide devices. In order to trimming device properties, we utilized refractive index change of amorphous silicon when it crystallizes by annealing. We fabricated MZI devices with amorphous silicon waveguides, and demonstrated the trimming of the transmission spectra by thermal annealing and also laser annealing after finished the device fabrication process. We observed 5.2 % of the refractive index change owing to crystallization by annealing in a nitrogen atmosphere and 5.8% of change by laser crystallization.

Citation Download Citation

Hidenori Iwata, Tomohiro Kita, and Hirohito Yamada "Variation of optical properties by the crystalline phase transition of polycrystalline silicon", Proc. SPIE 7943, Silicon Photonics VI, 79431F (17 January 2011); https://doi.org/10.1117/12.874435

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available