Paper
24 January 2011 Room temperature photovoltaic response of split-off band infrared detectors with a graded barrier
A. G. U. Perera, S. G. Matsik, D. P. Pitigala, Y. F. Lao, S. P. Khanna, L. H. Li, E. H. Linfield, Z. R. Wasilewski, M. Buchanan, X. H. Wu, H. C. Liu
Author Affiliations +
Abstract
Split-off band detectors have been demonstrated operating at or above room temperatures. However the specific detectivity was somewhat low due to the high dark current. Increasing the barrier height can suppress the dark current at high temperatures but results in a low responsivity due to the capture of carriers in emitters. A difference between the heights of the barriers on the two sides of an emitter provides highly energized carriers injected into the emitter and hence reduces the trapping effects. Three p-GaAs/AlGaAs samples with different Al fractions in the graded barriers are used to test these effects. Due to the graded barrier, the samples have an asymmetric band structure which makes it easier for excited carriers to travel in one direction than in the other. Therefore, photovoltaic operation is possible due to the built-in potential under equilibrium. Preliminary results obtained from these samples will be discussed.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. G. U. Perera, S. G. Matsik, D. P. Pitigala, Y. F. Lao, S. P. Khanna, L. H. Li, E. H. Linfield, Z. R. Wasilewski, M. Buchanan, X. H. Wu, and H. C. Liu "Room temperature photovoltaic response of split-off band infrared detectors with a graded barrier", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451I (24 January 2011); https://doi.org/10.1117/12.870047
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KEYWORDS
Sensors

Photovoltaics

Solar energy

Gallium arsenide

Superlattices

Aluminum

Infrared detectors

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