Paper
24 January 2011 Latest progress in high power VECSELs
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Abstract
Vertical external cavity surface emitting lasers (VECSELs) have captured the interest of high-brightness semiconductor researchers, primarily due to their simplicity in design, power scalability, and "open cavity architecture," wherein it is simple to integrate nonlinear elements into the cavity. Through direct emission and indirect (frequency-converted) means, wavelengths from the UV through to the mid-wave infrared regimes have been demonstrated, increasing the suitability of the VECSEL platform for multiple applications. This presentation outlines recent progress in VECSELs, measurements, novel cavities, and potential applications for these lasers.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert G. Bedford, Nathan Terry, Chris Hessenius, Mahmoud Fallahi, and Jerome Moloney "Latest progress in high power VECSELs", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 794508 (24 January 2011); https://doi.org/10.1117/12.873871
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KEYWORDS
Semiconductor lasers

Mirrors

Semiconductors

Modulation

Laser applications

Lanthanum

Semiconductor materials

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