Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

J. Hader; J. V. Moloney; S. W. Koch

doi:10.1117/12.873941

9 February 2011 Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

J. Hader, J. V. Moloney, S. W. Koch

Author Affiliations +

Proceedings Volume 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV; 79540H (2011) https://doi.org/10.1117/12.873941
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

A model based on density-activated defect recombination processes is proposed as a possible explanation for the efficiency droop in GaN-based lasers. The model yields very good agreement with experimentally measured efficiencies based on fit parameters that indicate the presence of two types of recombination centers that have different local distributions and recombination rates. The recombination rates of the two types are found to be very similar for devices operating at 530nm and 410nm.

Citation Download Citation

J. Hader, J. V. Moloney, and S. W. Koch "Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes", Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 79540H (9 February 2011); https://doi.org/10.1117/12.873941

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