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Proceedings Article

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

[+] Author Affiliations
J. Hader, J. V. Moloney

College of Optical Sciences, The Univ. of Arizona (USA) and Nonlinear Control Strategies Inc. (USA)

S. W. Koch

Philipps Univ. Marburg (Germany)

Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 79540H (February 09, 2011); doi:10.1117/12.873941
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From Conference Volume 7954

  • Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
  • Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder
  • San Francisco, California | January 22, 2011

abstract

A model based on density-activated defect recombination processes is proposed as a possible explanation for the efficiency droop in GaN-based lasers. The model yields very good agreement with experimentally measured efficiencies based on fit parameters that indicate the presence of two types of recombination centers that have different local distributions and recombination rates. The recombination rates of the two types are found to be very similar for devices operating at 530nm and 410nm.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

J. Hader ; J. V. Moloney and S. W. Koch
"Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes", Proc. SPIE 7954, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, 79540H (February 09, 2011); doi:10.1117/12.873941; http://dx.doi.org/10.1117/12.873941


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