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Proceedings Article

Modeling, design and simulation of tunable band pass filter using RF MEMS capacitance and transmission line

[+] Author Affiliations
Shimul C. Saha, Trond Sæther

Norwegian Univ. of Science and Technology (Norway)

Ulrik Hanke

SINTEF ICT (Norway)

Proc. SPIE 6035, Microelectronics: Design, Technology, and Packaging II, 60350C (January 05, 2006); doi:10.1117/12.638511
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From Conference Volume 6035

  • Microelectronics: Design, Technology, and Packaging II
  • Alex J. Hariz
  • Brisbane, Australia | December 11, 2005

abstract

In this paper we have shown design of a RF MEMS band pass filter. A high capacitance ratio and low actuation voltage RF MEMS shunt switch was designed and modeled the switch as a variable capacitance. The capacitance can be varied as a function of the actuation voltage. The capacitance is modeled as a lumped component, as used in a conventional LC filter. The design uses a novel approach to implement both distributed transmission line and RF MEMS capacitance together to replace the lumped elements. The use of RF MEMS variable capacitance gives the flexibility of tuning the cut-off and center frequency of bandpass filter. In this paper we show a design of 5.8 GHz center frequency band pass filter using the theory of stepped impedance transmission line and MEMS capacitance filter.

© (2005) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Shimul C. Saha ; Ulrik Hanke and Trond Sæther
"Modeling, design and simulation of tunable band pass filter using RF MEMS capacitance and transmission line", Proc. SPIE 6035, Microelectronics: Design, Technology, and Packaging II, 60350C (January 05, 2006); doi:10.1117/12.638511; http://dx.doi.org/10.1117/12.638511


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