Paper
28 December 2005 In-situ optical monitoring of silicon membrane etching
Franck Chollet, Ooi Giap Hwai
Author Affiliations +
Proceedings Volume 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV; 60370B (2005) https://doi.org/10.1117/12.638894
Event: Microelectronics, MEMS, and Nanotechnology, 2005, Brisbane, Australia
Abstract
We present a simple yet efficient technique to obtain membrane with precise thickness by the etching of silicon in anisotropic etchant. This technique uses a mechanical holder to protect the front side of the wafer and a light signal to monitor from a distance the thickness of a reference hole in the etched wafer. The original feature in our set-up is that we measure the absorption of the light in two different bands of wavelength, one where the silicon is highly absorbant and the other where it is not, to improve the robustness of the measurement. This principle allows for effectively compensating for the fluctuation in the light source intensity, and provide real-time information on the membrane thickness, removing the incertitude inherent in the usual timed etch. We present the application of this technique to the manufacturing of thick single-crystal stiffener used to prevent the warp of stacked thin films presenting a gradient of stress.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Franck Chollet and Ooi Giap Hwai "In-situ optical monitoring of silicon membrane etching", Proc. SPIE 6037, Device and Process Technologies for Microelectronics, MEMS, and Photonics IV, 60370B (28 December 2005); https://doi.org/10.1117/12.638894
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Silicon

Etching

Semiconducting wafers

Absorption

Near infrared

Visible radiation

Indium gallium arsenide

Back to Top