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Proceedings Article

Improving model prediction accuracy for ILT with aggressive SRAFs

[+] Author Affiliations
Sunggon Jung, Woojoo Sim, Moongyu Jeong, Junghoon Ser, Sungwoo Lee, Seoung-woon Choi

SAMSUNG Electronics Co., Ltd. (Korea, Republic of)

Xin Zhou, Lan Luan, Thomas Cecil, Donghwan Son, Robert Gleason, David Kim

Luminescent Technologies, Inc. (USA)

Proc. SPIE 7823, Photomask Technology 2010, 782311 (September 29, 2010); doi:10.1117/12.864528
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From Conference Volume 7823

  • Photomask Technology 2010
  • M. Warren Montgomery; Wilhelm Maurer
  • Monterey, California | September 13, 2010

abstract

For semiconductor IC manufacturing at sub-30nm and beyond, aggressive SRAFs are necessary to ensure sufficient process window and yield. Models used for full chip Inverse Lithography Technology (ILT) or OPC with aggressive SRAFs must predict both CDs and sidelobes accurately. Empirical models are traditionally designed to fit SEMmeasured CDs, but may not extrapolate accurately enough for patterns not included in their calibration. This is particularly important when using aggressive SRAFs, because adjusting an empirical parameter to improve fit to CDSEM measurements of calibration patterns may worsen the model's ability to predict sidelobes reliably. Proper choice of the physical phenomena to include in the model can improve its ability to predict sidelobes as well as CDs of critical patterns on real design layouts. In the work presented here, we examine the effects of modeling certain chemical processes in resist. We compare how a model used for ILT fits SEM CD measurements and predicts sidelobes for patterns with aggressive SRAFs, with and without these physically-based modeling features. In addition to statistics from fits to the calibration data, the comparison includes hot-spot checks performed with independent OPC verification software, and SEM measurements of on-chip CD variation using masks created with ILT.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Sunggon Jung ; Woojoo Sim ; Moongyu Jeong ; Junghoon Ser ; Sungwoo Lee, et al.
"Improving model prediction accuracy for ILT with aggressive SRAFs", Proc. SPIE 7823, Photomask Technology 2010, 782311 (September 29, 2010); doi:10.1117/12.864528; http://dx.doi.org/10.1117/12.864528


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