Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000

Takashi Kamikubo; Takayuki Ohnishi; Shigehiro Hara; Hirohito Anze; Yoshiaki Hattori; Shuichi Tamamushi; Shufeng Bai; Jen-Shiang Wang; Rafael Howell; George Chen; Jiangwei Li; Jun Tao; Jim Wiley; Terunobu Kurosawa; Yasuko Saito; Tadahiro Takigawa

doi:10.1117/12.865822

29 September 2010 Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000

Takashi Kamikubo, Takayuki Ohnishi, Shigehiro Hara, Hirohito Anze, Yoshiaki Hattori, Shuichi Tamamushi, Shufeng Bai, Jen-Shiang Wang, Rafael Howell, George Chen, Jiangwei Li, Jun Tao, Jim Wiley, Terunobu Kurosawa, Yasuko Saito, Tadahiro Takigawa

Author Affiliations +

Proceedings Volume 7823, Photomask Technology 2010; 782331 (2010) https://doi.org/10.1117/12.865822
Event: SPIE Photomask Technology, 2010, Monterey, California, United States

Abstract

In electron beam writing on EUV mask, it has been reported that CD linearity does not show simple signatures as observed with conventional COG (Cr on Glass) masks because they are caused by scattered electrons form EUV mask itself which comprises stacked heavy metals and thick multi-layers. To resolve this issue, Mask Process Correction (MPC) will be ideally applicable. Every pattern is reshaped in MPC. Therefore, the number of shots would not increase and writing time will be kept within reasonable range. In this paper, MPC is extended to modeling for correction of CD linearity errors on EUV mask. And its effectiveness is verified with simulations and experiments through actual writing test.

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Takashi Kamikubo, Takayuki Ohnishi, Shigehiro Hara, Hirohito Anze, Yoshiaki Hattori, Shuichi Tamamushi, Shufeng Bai, Jen-Shiang Wang, Rafael Howell, George Chen, Jiangwei Li, Jun Tao, Jim Wiley, Terunobu Kurosawa, Yasuko Saito, and Tadahiro Takigawa "Mask process correction (MPC) modeling and its application to EUV mask for electron beam mask writer EBM-7000", Proc. SPIE 7823, Photomask Technology 2010, 782331 (29 September 2010); https://doi.org/10.1117/12.865822

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