Silicon photodiode responsivity on the visible region

Arturo Nogueira-Jiménez; Carlos J. Román-Moreno

doi:10.1117/12.674616

10 February 2006 Silicon photodiode responsivity on the visible region

Arturo Nogueira-Jiménez, Carlos J. Román-Moreno

Proceedings Volume 6046, Fifth Symposium Optics in Industry; 604624 (2006) https://doi.org/10.1117/12.674616
Event: Fifth Symposium Optics in Industry, 2005, Santiago De Queretaro, Mexico

Abstract

A new method to characterize silicon photodiodes in the visible range, 380 nm through 780 nm, is presented. This methods uses a constant spectral power source with a thermal stability of filament better than 1 K over 2 999 K, that is the operation temperature. The spectral source consists of tungsten halogen thermally stabilized light source and a monocromator with focal length of 50 cm and a diffraction grating of 150 grooves/mm. The source allows a reproducibility of 0.2 nm and 0.01 % on intensity. The test silicon photodioode's resposivity shows a maximum deviation of 1.25 % on the spectral range as compare to a similar silicon photodetector calibrated by Newport Co.

Citation Download Citation

Arturo Nogueira-Jiménez and Carlos J. Román-Moreno "Silicon photodiode responsivity on the visible region", Proc. SPIE 6046, Fifth Symposium Optics in Industry, 604624 (10 February 2006); https://doi.org/10.1117/12.674616

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