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Proceedings Article

LPP source system development for HVM

[+] Author Affiliations
David C. Brandt, Igor V. Fomenkov, Alex I. Ershov, William N. Partlo, David W. Myers, Richard L. Sandstrom, Bruno M. La Fontaine, Michael J. Lercel, Alexander N. Bykanov, Norbert R. Böwering, Georgiy O. Vaschenko, Oleh V. Khodykin, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Palash Das, Vladimir B. Fleurov, Kevin Zhang, Daniel J. Golich, Silvia De Dea, Richard R. Hou, Wayne J. Dunstan, Christian J. Wittak, Peter Baumgart, Toshihiko Ishihara, Rod D. Simmons, Robert N. Jacques, Robert A. Bergstedt

Cymer, Inc. (USA)

Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691H (April 06, 2011); doi:10.1117/12.882208
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From Conference Volume 7969

  • Extreme Ultraviolet (EUV) Lithography II
  • Bruno M. La Fontaine; Patrick P. Naulleau
  • San Jose, California, USA | February 27, 2011

abstract

Laser produced plasma (LPP) systems have been developed as a viable approach for the EUV scanner light sources to support optical imaging of circuit features at sub-22nm nodes on the ITRS roadmap. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from leading scanner manufacturers. The status of first generation High Volume Manufacturing (HVM) sources in production and at a leading semiconductor device manufacturer is discussed. The EUV power at intermediate focus is discussed and the lastest data are presented. An electricity consumption model is described, and our current product roadmap is shown.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

David C. Brandt ; Igor V. Fomenkov ; Alex I. Ershov ; William N. Partlo ; David W. Myers, et al.
"LPP source system development for HVM", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691H (April 06, 2011); doi:10.1117/12.882208; http://dx.doi.org/10.1117/12.882208


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