Manufacturability of 2x-nm devices with EUV tool

Kazuo Tawarayama; Yumi Nakajima; Suigen Kyoh; Hajime Aoyama; Kentaro Matsunaga; Shunko Magoshi; Satoshi Tanaka; Yumi Hayashi; Ichiro Mori

doi:10.1117/12.879333

8 April 2011 Manufacturability of 2x-nm devices with EUV tool

Kazuo Tawarayama, Yumi Nakajima, Suigen Kyoh, Hajime Aoyama, Kentaro Matsunaga, Shunko Magoshi, Satoshi Tanaka, Yumi Hayashi, Ichiro Mori

Author Affiliations +

Proceedings Volume 7969, Extreme Ultraviolet (EUV) Lithography II; 79691L (2011) https://doi.org/10.1117/12.879333
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Due to the promising development status of EUVL as a practical lithography technology for the 2x-nm node, we are continuing to evaluate its process liability using the EUV1 at Selete, which has an Off-Axis illumination capability. The resolution limit of the EUV1 for L&S patterns is currently 18 nm for dipole illumination, and 16 nm for aggressive dipole illumination. This study examined the critical points of EUVL for device manufacturing through wafer processes. The yield obtained from electrical measurements indicates the maturity of the technology, including the resist process, the tool, and the mask. Optimization of the resist and RIE processes significantly improved the yield. The final yields obtained from electrical measurements were 100% for hp 30 nm, 70% for hp 28 nm, and 40% for hp 26 nm. These results demonstrate EUV lithography to be a practical technology that is now suitable for 2x nm semiconductor manufacture.

Citation Download Citation

Kazuo Tawarayama, Yumi Nakajima, Suigen Kyoh, Hajime Aoyama, Kentaro Matsunaga, Shunko Magoshi, Satoshi Tanaka, Yumi Hayashi, and Ichiro Mori "Manufacturability of 2x-nm devices with EUV tool", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691L (8 April 2011); https://doi.org/10.1117/12.879333

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