Wafer quality analysis of various scribe line mark designs

Jianming Zhou; Craig Hickman; Yuan He; Scott Light; Lucas Lamonds; Anton deVilliers

doi:10.1117/12.881551

20 April 2011 Wafer quality analysis of various scribe line mark designs

Jianming Zhou, Craig Hickman, Yuan He, Scott Light, Lucas Lamonds, Anton deVilliers

Proceedings Volume 7971, Metrology, Inspection, and Process Control for Microlithography XXV; 79711H (2011) https://doi.org/10.1117/12.881551
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Scribe Line Marks (SLM) printed on substrates are a standard method used by modern scanners for wafer alignment. Light reflected from the SLM forms a diffraction pattern which is used to determine the exact position of the wafer. The signal strength of the diffraction order needs to reach a certain threshold for the scanner to detect it. The marks are changed as the wafers go through various processes and are buried underneath complex film stacks. These processes and stacks can severely reduce wafer quality (WQ). Equipment manufactures recommend several variations of the SLM to improve WQ but these variations are not effective for certain advanced processes. This paper discusses theoretical analysis of how SLM designs affect wafer quality, addresses the challenge of self-aligned double patterning (SADP) on SLMs and experimentally verifies results using various structures.

Citation Download Citation

Jianming Zhou, Craig Hickman, Yuan He, Scott Light, Lucas Lamonds, and Anton deVilliers "Wafer quality analysis of various scribe line mark designs", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79711H (20 April 2011); https://doi.org/10.1117/12.881551

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