A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM

Alok Vaid; Bin Bin Yan; Yun Tao Jiang; Mark Kelling; Carsten Hartig; John Allgair; Peter Ebersbach; Matthew Sendelbach; Narender Rana; Ahmad Katnani; Erin Mclellan; Chas Archie; Cornel Bozdog; Helen Kim; Michael Sendler; Susan Ng; Boris Sherman; Boaz Brill; Igor Turovets; Ronen Urensky

doi:10.1117/12.881632

28 March 2011 A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM

Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John Allgair, Peter Ebersbach, Matthew Sendelbach, Narender Rana, Ahmad Katnani, Erin Mclellan, Chas Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, Ronen Urensky

Author Affiliations +

Proceedings Volume 7971, Metrology, Inspection, and Process Control for Microlithography XXV; 797103 (2011) https://doi.org/10.1117/12.881632
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Shrinking design rules and reduced process tolerances require tight control of CD linewidth, feature shape, and profile of the printed geometry. The Holistic Metrology approach consists of utilizing all available information from different sources like data from other toolsets, multiple optical channels, multiple targets, etc. to optimize metrology recipe and improve measurement performance. Various in-line critical dimension (CD) metrology toolsets like Scatterometry OCD (Optical CD), CD-SEM (CD Scanning Electron Microscope) and CD-AFM (CD Atomic Force Microscope) are typically utilized individually in fabs. Each of these toolsets has its own set of limitations that are intrinsic to specific measurement technique and algorithm. Here we define "Hybrid Metrology" to be the use of any two or more metrology toolsets in combination to measure the same dataset. We demonstrate the benefits of the Hybrid Metrology on two test structures: 22nm node Gate Develop Inspect (DI) & 32nm node FinFET Gate Final Inspect (FI). We will cover measurement results obtained using typical BKM as well as those obtained by utilizing the Hybrid Metrology approach. Measurement performance will be compared using standard metrology metrics for example accuracy and precision.

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Alok Vaid, Bin Bin Yan, Yun Tao Jiang, Mark Kelling, Carsten Hartig, John Allgair, Peter Ebersbach, Matthew Sendelbach, Narender Rana, Ahmad Katnani, Erin Mclellan, Chas Archie, Cornel Bozdog, Helen Kim, Michael Sendler, Susan Ng, Boris Sherman, Boaz Brill, Igor Turovets, and Ronen Urensky "A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797103 (28 March 2011); https://doi.org/10.1117/12.881632

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