Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Applicability of global source mask optimization to 22/20nm node and beyond

[+] Author Affiliations
Kehan Tian, Jaione Tirapu-Azpiroz, Jason Meiring

IBM Corp. (United States)

Moutaz Fakhry, Aasutosh Dave, Alexander Tritchkov, Bruce Durgan, Kostas Adam, Gabriel Berger, Gandharv Bhatara

Mentor Graphics Corp. (United States)

Alan E. Rosenbluth, David Melville, Scott Mansfield, Alexander Wei, Young Kim

IBM Thomas J. Watson Research Ctr. (United States)

Masaharu Sakamoto, Tadanobu Inoue

IBM Research, Tokyo (Japan)

Henning Haffner

Infineon Technologies North America Corp. (United States)

Byung-Sung Kim

SAMSUNG Electronics Co., Ltd. (United States)

Proc. SPIE 7973, Optical Microlithography XXIV, 79730C (March 22, 2011); doi:10.1117/12.879703
Text Size: A A A
From Conference Volume 7973

  • Optical Microlithography XXIV
  • San Jose, California, USA | February 27, 2011

abstract

Source-mask optimization (SMO) in optical lithography has in recent years been the subject of increased exploration as an enabler of 22/20nm and beyond technology nodes [1-6]. It has been shown that intensive optimization of the fundamental degrees of freedom in the optical system allows for the creation of non-intuitive solutions in both the source and mask, which yields improved lithographic performance. This paper will demonstrate the value of SMO software in resolution enhancement techniques (RETs). Major benefits of SMO include improved through-pitch performance, the possibility of avoiding double exposure, and superior performance on two dimensional (2D) features. The benefits from only optimized source, only optimized mask, and both source and mask optimized together will be demonstrated. Furthermore, we leverage the benefits from intensively optimized masks to solve large array problems in memory use models (MUMs). Mask synthesis and data prep flows were developed to incorporate the usage of SMO, including both RETs and MUMs, in several critical layers during 22/20nm technology node development. Experimental assessment will be presented to demonstrate the benefits achieved by using SMO during 22/20nm node development. © (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Kehan Tian ; Moutaz Fakhry ; Aasutosh Dave ; Alexander Tritchkov ; Jaione Tirapu-Azpiroz, et al.
" Applicability of global source mask optimization to 22/20nm node and beyond ", Proc. SPIE 7973, Optical Microlithography XXIV, 79730C (March 22, 2011); doi:10.1117/12.879703; http://dx.doi.org/10.1117/12.879703


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.