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Proceedings Article

New 0.75 NA ArF scanning lithographic tool

[+] Author Affiliations
Lifeng Duan, Jianrui Cheng, Gang Sun, Yonghui Chen

Shanghai Micro Electronics Equipment Co., Ltd. (China)

Proc. SPIE 7973, Optical Microlithography XXIV, 79732D (March 22, 2011); doi:10.1117/12.879376
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From Conference Volume 7973

  • Optical Microlithography XXIV
  • Mircea V. Dusa
  • San Jose, California | February 27, 2011

abstract

A new company in the lithography world, SMEE has developed and produced a prototype wafer exposure tool, with an ArF laser light source. This tool, SMEE SSA600/10, adopted step and scan technology to obtain a large exposure filed and to average optical aberrations for a scanned image to improve CD uniformity and reduce distortion. The maximum numerical aperture is 0.75 and the maximum coherence factor of illumination system is 0.88. The illuminator provides continuously variable conventional and off-axis illumination modes to improve resolution. In this paper, the configuration of the exposure tool is presented and design concepts of the scanner are introduced. We show actual test data such as synchronization accuracy, focus and leveling repeatability, dynamic imaging performance (resolution, depth of focus) and overlay.

© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Lifeng Duan ; Jianrui Cheng ; Gang Sun and Yonghui Chen
"New 0.75 NA ArF scanning lithographic tool", Proc. SPIE 7973, Optical Microlithography XXIV, 79732D (March 22, 2011); doi:10.1117/12.879376; http://dx.doi.org/10.1117/12.879376


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