Gate control of a quantum dot single-electron spin through geometric phases: Feynman disentangling method

Sanjay Prabhakar; James E. Raynolds; Akira Inomata

doi:10.1117/12.856025

16 April 2010 Gate control of a quantum dot single-electron spin through geometric phases: Feynman disentangling method

Sanjay Prabhakar, James E. Raynolds, Akira Inomata

Proceedings Volume 7702, Quantum Information and Computation VIII; 77020V (2010) https://doi.org/10.1117/12.856025
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

The use of topological phases for the manipulation of electron spins in GaAs quantum dots is a promising candidate for solid state quantum computation and non-charged based logic devices for projected post-CMOS technology. A single electron can be trapped and its spin can be manipulated by moving the quantum dot adiabatically in a closed loop (Berry effect) through the application of gate potentials. In this paper, we present numerical simulations and analytical expressions for the transition probability of electron spins in single electron devices for a quantum dot. Using analytical and numerical techniques, we calculate the Berry Phase for both nondegenerate and degenerate cases. We show that the spin orbit coupling in III-V type semiconductors will enhance the transition probability of the electron spin over pure Dresselhaus or pure Rashba cases considered separately. Considering these mechanisms separately however, is useful in that an exact solution exists as determined by the Feynman disentangling technique. For the most general cases where the solution of the propagator becomes non-trivial, we carry out the numerical simulations of such propagator.

Citation Download Citation

Sanjay Prabhakar, James E. Raynolds, and Akira Inomata "Gate control of a quantum dot single-electron spin through geometric phases: Feynman disentangling method", Proc. SPIE 7702, Quantum Information and Computation VIII, 77020V (16 April 2010); https://doi.org/10.1117/12.856025

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