Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Model for passive quenching of SPADs

[+] Author Affiliations
Majeed M. Hayat, David A. Ramirez

Ctr. for High Technology Materials, The Univ. of New Mexico (USA)

Mark A. Itzler

Princeton Lightwave, Inc. (USA)

Graham J. Rees

The Univ. of Sheffield (United Kingdom)

Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76082B (January 22, 2010); doi:10.1117/12.847005
Text Size: A A A
From Conference Volume 7608

  • Quantum Sensing and Nanophotonic Devices VII
  • Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown
  • San Francisco, California | January 23, 2010

abstract

Infrared single-photon avalanche photodiodes (SPADs) are used in a number of sensing applications such as satellite laser ranging, deep-space laser communication, time-resolved photon counting, quantum key distribution and quantum cryptography. A passively quenched SPAD circuit consists of a DC source connected to the SPAD, to provide the reverse bias, and a series load resistor. Upon a photon-generated electron-hole pair triggering an avalanche breakdown, current through the diode and the load resistor rises quickly reaching a steady state value, after which it can collapse (quench) at a stochastic time. In this paper we review three recent analytical and Monte-Carlo based models for the quenching time. In the first model, the applied bias after the trigger of an avalanche is assumed to be constant at the breakdown bias while the avalanche current is allowed to be stochastic. In the second model, the dynamic negative feedback, which is due to the dynamic voltage drop across the load resistor, is taken into account, albeit without considering the stochastic fluctuations in the avalanche pulse. In the third model, Monte-Carlo simulation is used to generate impact ionizations with the inclusion of the effects of negative feedback. The latter model is based on simulating the impact ionizations inside the multiplication region according to a dynamic bias voltage that is a function of the avalanche current it indices. In particular, it uses the time evolution of the bias across the diode to set the coefficients for impact ionization. As such, this latter model includes both the negative feedback and the stochastic nature of the avalanche current.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Majeed M. Hayat ; Mark A. Itzler ; David A. Ramirez and Graham J. Rees
"Model for passive quenching of SPADs", Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76082B (January 22, 2010); doi:10.1117/12.847005; http://dx.doi.org/10.1117/12.847005


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement


  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.