Study of some optoelectronics characteristics of InGaAs/InP photodetectors

Ana Luz Muñoz Zurita; Joaquin Campos Acosta; Ramón Gómez Jiménez; Jorge Rojas Domenico; Alexandre S. Shcherbakov

doi:10.1117/12.854900

13 May 2010 Study of some optoelectronics characteristics of InGaAs/InP photodetectors

Ana Luz Muñoz Zurita, Joaquin Campos Acosta, Ramón Gómez Jiménez, Jorge Rojas Domenico, Alexandre S. Shcherbakov

Proceedings Volume 7726, Optical Sensing and Detection; 772629 (2010) https://doi.org/10.1117/12.854900
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

Spectral responsivity and reflectance of two types of InGaAs/InP photodiodes have been measured. The internal quantum efficiency calculated from them has shown that it is possible to obtain an absolute radiometer within 1100 nm and 1500 nm. Models to interpolate reflectance and internal quantum efficiency are presented in this work. Responsivity is the radiometric characteristic of main interest in the fields where these devices are to be used for optical radiation measurements. As it is well known, the responsivity of a photodiode can be calculated if the spectral reflectance and internal quantum efficiency are known [1]. The measurement and interpolation of spectral reflectance and internal quantum efficiency based on a model of layered structure in the diode are presented in this paper. This allows to use this type of photodiode to measure optical power at any wavelength within their spectral sensitivity range without having to calibrate them at every specific wavelength, what is important because of the wide use of this photodiodes to realize spectroradiometric scales in the near IR range.

Citation Download Citation

Ana Luz Muñoz Zurita, Joaquin Campos Acosta, Ramón Gómez Jiménez, Jorge Rojas Domenico, and Alexandre S. Shcherbakov "Study of some optoelectronics characteristics of InGaAs/InP photodetectors", Proc. SPIE 7726, Optical Sensing and Detection, 772629 (13 May 2010); https://doi.org/10.1117/12.854900

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