Radiation hardness studies of InGaAs photodiodes at 30, 52, & 98 MeV and fluences to 10^10 protons/cm^2

Brian J. Baptista; Stuart L. Mufson

doi:10.1117/12.856481

19 July 2010 Radiation hardness studies of InGaAs photodiodes at 30, 52, & 98 MeV and fluences to 10¹⁰ protons/cm²

Brian J. Baptista, Stuart L. Mufson

Proceedings Volume 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV; 774225 (2010) https://doi.org/10.1117/12.856481
Event: SPIE Astronomical Telescopes + Instrumentation, 2010, San Diego, California, United States

Abstract

We report the effects of radiation damage due to ionizing protons on InGaAs photodiodes. The photodiodes were irradiated at energies of 30, 52, and 98 MeV and fluences up to 10¹⁰ protons/cm² in experiments at the Indiana University Cyclotron Facility. The photodiodes were tested for changes in their dark current, their relative responsivity as a function of wavelength from 1000 - 1600 nm, and their absolute responsivity in narrow bandpasses spread throughout the same wavelength region. The measurements were all made with detectors traceable to NIST standards. At these exposures and energies, the most significant effects are seen in the dark current levels.

Citation Download Citation

Brian J. Baptista and Stuart L. Mufson "Radiation hardness studies of InGaAs photodiodes at 30, 52, & 98 MeV and fluences to 10¹⁰ protons/cm²", Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 774225 (19 July 2010); https://doi.org/10.1117/12.856481

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