Nanosecond laser ablation and deposition of Ge films

Seong Shan Yap; Wee Ong Siew; Cécile Ladam; Øystein Dahl; Turid Worren Reenaas; Teck Yong Tou

doi:10.1117/12.869014

23 August 2010 Nanosecond laser ablation and deposition of Ge films

Seong Shan Yap, Wee Ong Siew, Cécile Ladam, Øystein Dahl, Turid Worren Reenaas, Teck Yong Tou

Proceedings Volume 7766, Nanostructured Thin Films III; 776614 (2010) https://doi.org/10.1117/12.869014
Event: SPIE NanoScience + Engineering, 2010, San Diego, California, United States

Abstract

In this work, nanosecond-pulsed from ultra-violet to infrared lasers: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were employed for ablation and deposition of germanium films in background pressure of <10^-6 Torr. Deposition was carried out at room temperature on Si, GaAs, sapphire and glass. The as-deposited films, characterized by using scanning electron microscopy (SEM) and atomic force microscopy (AFM), consist of nano to micron-sized droplets on nanostructured film. The dependence of film properties on laser wavelengths and fluence are discussed.

Citation Download Citation

Seong Shan Yap, Wee Ong Siew, Cécile Ladam, Øystein Dahl, Turid Worren Reenaas, and Teck Yong Tou "Nanosecond laser ablation and deposition of Ge films", Proc. SPIE 7766, Nanostructured Thin Films III, 776614 (23 August 2010); https://doi.org/10.1117/12.869014

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available