Quasi-optical technique for sensing bond quality of silicon wafers

A. Elhawil; I. Huynen; J.-P. Raskin; C. Roda Neve; B. Olbrechts; J. Stiens; R. Vounckx

doi:10.1117/12.853667

13 May 2010 Quasi-optical technique for sensing bond quality of silicon wafers

A. Elhawil, I. Huynen, J.-P. Raskin, C. Roda Neve, B. Olbrechts, J. Stiens, R. Vounckx

Proceedings Volume 7716, Micro-Optics 2010; 77161R (2010) https://doi.org/10.1117/12.853667
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

In this paper, we investigate a novel fast and reliable method to check the bonding quality of silicon wafers. It is based on illuminating the wafers with a high frequency waves (110 - 170 GHz) using quasi-optical technique. The reflected energy is used to evaluate the bonding strength. The reported experimental study is compared with the Infrared images.

Citation Download Citation

A. Elhawil, I. Huynen, J.-P. Raskin, C. Roda Neve, B. Olbrechts, J. Stiens, and R. Vounckx "Quasi-optical technique for sensing bond quality of silicon wafers", Proc. SPIE 7716, Micro-Optics 2010, 77161R (13 May 2010); https://doi.org/10.1117/12.853667

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