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Proceedings Article

Quasi-optical technique for sensing bond quality of silicon wafers

[+] Author Affiliations
A. Elhawil, J. Stiens, R. Vounckx

Vrije Univ. Brussels (Belgium)

I. Huynen, J.-P. Raskin, C. Roda Neve, B. Olbrechts

Univ. Catholique de Louvain (Belgium)

Proc. SPIE 7716, Micro-Optics 2010, 77161R (May 13, 2010); doi:10.1117/12.853667
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From Conference Volume 7716

  • Micro-Optics 2010
  • Hugo Thienpont; Peter Van Daele; Jürgen Mohr; Hans Zappe
  • Brussels, Belgium | April 12, 2010

abstract

In this paper, we investigate a novel fast and reliable method to check the bonding quality of silicon wafers. It is based on illuminating the wafers with a high frequency waves (110 - 170 GHz) using quasi-optical technique. The reflected energy is used to evaluate the bonding strength. The reported experimental study is compared with the Infrared images.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Topics

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Citation

A. Elhawil ; I. Huynen ; J.-P. Raskin ; C. Roda Neve ; B. Olbrechts, et al.
"Quasi-optical technique for sensing bond quality of silicon wafers", Proc. SPIE 7716, Micro-Optics 2010, 77161R (May 13, 2010); doi:10.1117/12.853667; http://dx.doi.org/10.1117/12.853667


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