State of the art of fine-patterned Si TFT

Takashi Noguchi

doi:10.1117/12.482573

16 May 2003 State of the art of fine patterned Si TFT

Takashi Noguchi

Proceedings Volume 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas; (2003) https://doi.org/10.1117/12.482573
Event: Electronic Imaging 2003, 2003, Santa Clara, CA, United States

Abstract

Performance and relating subject for fine patterned Si TFT (Thin Film Transistor) are reviewed and discussed from a viewpoint of device and/or fabrication process based on reported results. Poly-Si TFTs fabricated on glass using low-temperature process are studied extensively for the application to LCD (Liquid Crystal Display) or OLED (Organic Light Emitting Diode) Display. Currently, the research target for the TFT application is emphasized on the highly functional system on glass or the display on flexible substrate by adopting an effective crystallizing technique of SPC (Solid Phase Crystallization) or ELC (Excimer Laser Crystallization). Improvement of device characteristics such as an enhancement of carrier mobility has been studied intensively by enlarging the grain size. Reduction of the voltage and shrinkage of the device size are the trend of Si LSI, which arise a peculiar issue of uniformity or an anisotropy problem for the device characteristics in the large grained poly-Si film. Some trial approaches for solving the issues such as nucleation control for the grain growth or lateral grain growth are proposed, so far. By overcoming the issues, coming SOP (System on Panel) era using the Si TFTs is expected.

Citation Download Citation

Takashi Noguchi "State of the art of fine patterned Si TFT", Proc. SPIE 5004, Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas, (16 May 2003); https://doi.org/10.1117/12.482573

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