EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

Y. David Chan; Abbas Rastegar; Henry Yun; E. Steve Putna; Stefan Wurm

doi:10.1117/12.847371

20 March 2010 EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

Y. David Chan, Abbas Rastegar, Henry Yun, E. Steve Putna, Stefan Wurm

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 76361D (2010) https://doi.org/10.1117/12.847371
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Reducing mask blank and patterned mask defects is the number one challenge for extreme ultraviolet lithography. If the industry succeeds in reducing mask blank defects at the required rate of 10X every year for the next 2-3 years to meet high volume manufacturing defect requirements, new inspection and review tool capabilities will soon be needed to support this goal. This paper outlines the defect inspection and review tool technical requirements and suggests development plans to achieve pilot line readiness in 2011/12 and high volume manufacturing readiness in 2013. The technical specifications, tooling scenarios, and development plans were produced by a SEMATECH-led technical working group with broad industry participation from material suppliers, tool suppliers, mask houses, integrated device manufacturers, and consortia. The paper summarizes this technical working group's assessment of existing blank and mask inspection/review infrastructure capabilities to support pilot line introduction and outlines infrastructure development requirements and tooling strategies to support high volume manufacturing.

Citation Download Citation

Y. David Chan, Abbas Rastegar, Henry Yun, E. Steve Putna, and Stefan Wurm "EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361D (20 March 2010); https://doi.org/10.1117/12.847371

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