Paper
22 March 2010 A simple null-field ellipsometric imaging system (NEIS) for in-situ monitoring of EUV-induced deposition on EUV optics
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Abstract
We describe a null-field ellipsometric imaging system (NEIS) that provides for the real-time imaging of carbon deposition profiles on extreme-ultraviolet (EUV) optics in a vacuum system. NEIS has been demonstrated at NIST on a small chamber that is used for EUV optics lifetime testing. The system provides images of carbon deposition spots with sub-nanometer resolution thickness measurements that maintain good agreement with those from ex-situ spectral ellipsometry (SE) and x-ray photoelectron spectroscopy (XPS). The system will be implemented on several synchrotron beamlines for real-time monitoring of carbon film growth on optics during EUV irradiation.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rashi Garg, Nadir Faradzhev, Shannon Hill, Lee Richter, P. S. Shaw, R. Vest, and T. B. Lucatorto "A simple null-field ellipsometric imaging system (NEIS) for in-situ monitoring of EUV-induced deposition on EUV optics", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 76361Z (22 March 2010); https://doi.org/10.1117/12.855967
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Cited by 6 scholarly publications.
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KEYWORDS
Carbon

EUV optics

Extreme ultraviolet

Imaging systems

Dielectrics

Extreme ultraviolet lithography

Polarizers

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