Full wafer macro-CD imaging for excursion control of fast patterning processes

Lars Markwort; Christoph Kappel; Reza Kharrazian; Pierre-Yves Guittet

doi:10.1117/12.846618

1 April 2010 Full wafer macro-CD imaging for excursion control of fast patterning processes

Lars Markwort, Christoph Kappel, Reza Kharrazian, Pierre-Yves Guittet

Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 763807 (2010) https://doi.org/10.1117/12.846618
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

A powerful new inspection technology enables the excursion control of fast patterning processes. Full images of 300mm wafers are captured and processed to extract CD uniformity information of contact hole and line-space patterns. Suitable masking filters are applied to process and analyze the information from active logic and/or memory areas separately. Characteristic process tool signatures can then be detected based on die, exposure field and wafer-level pattern variations. Based on inspection times of a few seconds per wafer, rapid monitoring of 100% of processed wafers at full surface is feasible. CD-imaging is demonstrated for the monitoring of key patterning process steps in gate formation. Use cases for stand-alone, integrated and smart sampling strategies are discussed.

Citation Download Citation

Lars Markwort, Christoph Kappel, Reza Kharrazian, and Pierre-Yves Guittet "Full wafer macro-CD imaging for excursion control of fast patterning processes", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 763807 (1 April 2010); https://doi.org/10.1117/12.846618

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