High resolution positive-working molecular resist attached with alicyclic acid-leaving group

Arisa Yamada; Shigeki Hattori; Satoshi Saito; Koji Asakawa; Takeshi Koshiba; Tetsuro Nakasugi

doi:10.1117/12.851392

25 March 2010 High resolution positive-working molecular resist attached with alicyclic acid-leaving group

Arisa Yamada, Shigeki Hattori, Satoshi Saito, Koji Asakawa, Takeshi Koshiba, Tetsuro Nakasugi

Proceedings Volume 7639, Advances in Resist Materials and Processing Technology XXVII; 76390S (2010) https://doi.org/10.1117/12.851392
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

Molecular resists are expected to offer the advantages of high resolution and low line width roughness (LWR) for the next-generation lithography. We developed a new molecular resist that showed high resolution by introducing an efficient acid-leaving group to an amorphous molecule, 1,3,5-Tris(p-(p-hydroxy- phenyl) phenyl) benzene (THTPPB). The lithographic properties such as sensitivity, developing rate, and adhesion are considered to be controlled using a suitable acid-leaving group. A molecular resist of THTPPB to which is attached with an alicyclic acid-leaving group, hyperlactyl vinyl ether group (HPVE) showed a high resolution for electron beam (EB) lithography and good etch resistance. Half-pitch 36 nm line-and-space (1:1) positive pattern was fabricated using 100 keV EB with chemically amplified molecular resist based on HPVETPPB.

Citation Download Citation

Arisa Yamada, Shigeki Hattori, Satoshi Saito, Koji Asakawa, Takeshi Koshiba, and Tetsuro Nakasugi "High resolution positive-working molecular resist attached with alicyclic acid-leaving group", Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76390S (25 March 2010); https://doi.org/10.1117/12.851392

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