High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructures

V. V. Strelchuk; Mikhail Ya. Valakh; M. V. Vuychik; S. V. Ivanov; Petr S. Kop'ev; T. V. Shubina

doi:10.1117/12.511505

11 June 2003 High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructures

V. V. Strelchuk, Mikhail Ya. Valakh, M. V. Vuychik, S. V. Ivanov, Petr S. Kop'ev, T. V. Shubina

Proceedings Volume 5023, 10th International Symposium on Nanostructures: Physics and Technology; (2003) https://doi.org/10.1117/12.511505
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The intensive up-conversion photoluminescence (UPL) was observed at low temperatures in CdSe/ZnSe structures with single CdSe inserts of a nominal thickness of 1.5 and 0.6 ML. The quadratic-like dependence of UPL intensity on the excitation power was obtained. UPL mechanism was interpreted on the basis of non-linear process of two-step two-photon absorption (TS-TPA) through deep defect states including cation vacancies localized at the barier-nanoisland heterointerface.

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V. V. Strelchuk, Mikhail Ya. Valakh, M. V. Vuychik, S. V. Ivanov, Petr S. Kop'ev, and T. V. Shubina "High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructures", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.511505

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