Paper
11 June 2003 About the phosphorus sensitization of silicon quantum dots in SiO2 photoluminescence
David I. Tetelbaum, V. A. Burdov, A. N. Mikhaylov, Sergey A. Trushin
Author Affiliations +
Abstract
The question about the mechanisms of the photoluminescence enhancement of the system of silicon nanocrystals embedded into silica matrix at phosphorus doping is described. Both the experimental and theoretical arguments are presented.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David I. Tetelbaum, V. A. Burdov, A. N. Mikhaylov, and Sergey A. Trushin "About the phosphorus sensitization of silicon quantum dots in SiO2 photoluminescence", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.513634
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Cited by 2 scholarly publications.
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KEYWORDS
Phosphorus

Silicon

Electrons

Luminescence

Quantum dots

Chemical species

Doping

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