Paper
11 June 2003 Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems
D. B. Suyatin, E. S. Soldatov, Ivan Maximov, Lars Montelius, Lars Samuelson, G. B. Khomutov, S. P. Gubin, A. N. Sergeev-Cherenkov
Author Affiliations +
Abstract
Gold nanoelectrodes with gaps of less than 10 nm were formed by conventional E-beam lithography on silicon substrates covered by Al2O3. Molecular films were deposited on the electrodes by Langmuir-Shaefer technique. The I-V curves of such systems show a suppressed conductance indicating a correlated electron tunnelling through the system. All measurements were made at room temperature.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. B. Suyatin, E. S. Soldatov, Ivan Maximov, Lars Montelius, Lars Samuelson, G. B. Khomutov, S. P. Gubin, and A. N. Sergeev-Cherenkov "Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems", Proc. SPIE 5023, 10th International Symposium on Nanostructures: Physics and Technology, (11 June 2003); https://doi.org/10.1117/12.514284
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Molecules

Electrodes

Molecular electronics

Electron transport

Resistance

Metals

Nanostructures

Back to Top