Improved model for focus-exposure data analysis

Chris A. Mack; Jeff D. Byers

doi:10.1117/12.485040

2 June 2003 New model for focus-exposure data analysis

Chris A. Mack, Jeff D. Byers

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.485040
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

The paper introduces an improved, physics-based function for fitting lithographic data from focus-exposure matrices. Unlike simple polynomial functions, the coefficients of this equation offer physical insight into the meaning and nature of the data. Derivation of this equation from first principles of the physics of lithographic imaging is presented. Examples based on typical experimental data are shown and the advantages of using a physics-based fitting function is described based on improved fitting and noise filtering.

Citation Download Citation

Chris A. Mack and Jeff D. Byers "New model for focus-exposure data analysis", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.485040

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