Paper
2 June 2003 New apparent beam width artifact and measurement methodology for CD-SEM resolution monitoring
Jason A. Mayer, Kylee J. Huizenga, Eric P. Solecky, Charles N. Archie, G. W. Banke Jr., Robert M. Cogley, Claudine Nathan, James M. Robert
Author Affiliations +
Abstract
The Apparent Beam Width (ABW) total system resolution metric is part of the International SEMATECH CDSEM specification and bench marking activities. It is also used in our own CDSEM specification, evaluations, and tool maintenance activities. Our first set of ABW artifacts, constructed a few years ago, need retirement for several reasons, including: (1) their materials and dimensions no longer represent current manufacturing line samples and (2) their line edge variation is too large for current and future ABW applications. The construction and testing of a new ABW artifact will be discussed in this paper. The use of ABW as a monitor for total system resolution requires a unique set of sample characteristics, which include near vertical sidewalls, minimal top corner rounding, minimal line edge roughness (LER), and good line edge uniformity across the artifact set. Several process iterations were performed using the latest photolithographic processes whilst including numerous measurement evaluations in order to achieve these characteristics. A sampling methodology has been formulated to take advantage of the good within-field, field-to-field, and wafer-to-wafer uniformities of the artifacts. In addition to driving resolution improvements ABW also serves as a metric for tool-to-tool matching in a manufacturing environment.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jason A. Mayer, Kylee J. Huizenga, Eric P. Solecky, Charles N. Archie, G. W. Banke Jr., Robert M. Cogley, Claudine Nathan, and James M. Robert "New apparent beam width artifact and measurement methodology for CD-SEM resolution monitoring", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.485035
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Cited by 5 scholarly publications.
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KEYWORDS
Semiconducting wafers

Atomic force microscopy

Line edge roughness

Scanning electron microscopy

Voltage controlled current source

Manufacturing

Optical resolution

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