Paper
12 June 2003 Investigation on the role of residual casting solvent in photolithographic behavior in 193-nm resists
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Abstract
We have been interested in the effect of the residual solvent on lithographic performance. The concentration distribution of solvent molecules along the film depth and the amount of residual solvents depend on their physical properties: evaporation rate, boiling point, viscosity, and so on. Since fast-evaporating solvent can make a dense skin-like layer at the top of the resist film, faster evaporation rate of solvent makes thicker film, while slow rate results in thinner film. And the amount of residual solvent is dependent of the evaporation rate of the casting solvent. The amount of residual solvent was verified by TGA method. It was found that the amount of residual solvent is a major parameter to determine film thickness, stiffness of resist pattern, acid diffusion length, and pattern profile shape.
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Jae-Hyun Kang, Seung-Keun Oh, Eun-Kyung Son, Jung-Woo Kim, Yun-Hyi Kim, Yong-Jun Choi, Deog-Bae Kim, and Jaehyun Kim "Investigation on the role of residual casting solvent in photolithographic behavior in 193-nm resists", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485163
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KEYWORDS
Diffusion

Electroluminescence

Polymers

Polymer thin films

Lithography

Semiconducting wafers

Silicon films

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