Novel silicon-containing polymers as photoresist materials for EUV lithography

Young-Je Kwark; Juan-Pablo Bravo-Vasquez; Christopher Kemper Ober; Heidi B. Cao; Hai Deng; Robert P. Meagley

doi:10.1117/12.485184

12 June 2003 Novel silicon-containing polymers as photoresist materials for EUV lithography

Young-Je Kwark, Juan-Pablo Bravo-Vasquez, Christopher Kemper Ober, Heidi B. Cao, Hai Deng, Robert P. Meagley

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485184
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Performance requirements for EUV resists may require the development of entirely new polymer platforms. In the first approach, we have synthesized norbornene-based copolymers using ring-opening metathesis polymerization (ROMP). Silicon containing norbornenes were synthesized and copolymerized with a series of monomers having acid sensitive and polar groups, including nitrile, carboxylic acid, hydroxyl, and anhydride functions to achieve random copolymers with suitable properties to be applied as resist materials. Using well-characterized metal alkylidene complexes, we could prepared polymers having controlled molecular weights and low polydispersities. From initial exposure studies using an EUV interferometer, we were able to pattern 150 nm pitchs without additional optimization. In the second approach, polysilane has been copolymerized with acid sensitive monomers (acrylate and styrene derivatives) to produced chemically amplified polysilane-copolymers.

Citation Download Citation

Young-Je Kwark, Juan-Pablo Bravo-Vasquez, Christopher Kemper Ober, Heidi B. Cao, Hai Deng, and Robert P. Meagley "Novel silicon-containing polymers as photoresist materials for EUV lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485184

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