Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applications

Jos de Klerk; Louis Jorritsma; Eelco van Setten; Richard Droste; Richard du Croo de Jongh; Steven G. Hansen; Dan Smith; Mark A. van de Kerkhof; Frank van de Mast; Paul Graeupner; Thomas Rohe; Klaus Kornitzer

doi:10.1117/12.485372

26 June 2003 Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applications

Jos de Klerk, Louis Jorritsma, Eelco van Setten, Richard Droste, Richard du Croo de Jongh, Steven G. Hansen, Dan Smith, Mark A. van de Kerkhof, Frank van de Mast, Paul Graeupner, Thomas Rohe, Klaus Kornitzer

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Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485372
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

As the semiconductor industry looks into the near future to extend manufacturing beyond 100nm, a new optical lithography system was developed by ASML. To achieve the aggressive industry roadmap and enable high volume manufacturing of sub 100nm resolutions at low k1 requires a number of challenges to be overcome. This paper reviews the design, system performance and measurements of a High NA, Dual stage 193nm TWINSCAN system planned for high volume manufacturing for 80nm applications. The overall system capability to effectively measure and control to a high precision the various attributes upon process control necessary for adequate CD control, in the low k1 regime will be shown. This paper will discuss the needed imaging control and the requirement for an extremely stable and matured platform. The system's dynamic, focus, leveling and dose delivery performance will be shown. Additionally, the automated control features of the optical system will be shown that enable the use of the various resolution enhancement techniques (RET) currently under development. The ability to optimize imaging performance with the control and flexibility in the pupil formation optics will be discussed. Finally, experimental results of an in-situ measurement technique with automated feedback control to optimize projection lens aberrations, which has a direct impact to imaging fidelity, will be shown. In summary, the lithographic system functionality and performance needed to achieve 80nm volume manufacturing will be presented.

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Jos de Klerk, Louis Jorritsma, Eelco van Setten, Richard Droste, Richard du Croo de Jongh, Steven G. Hansen, Dan Smith, Mark A. van de Kerkhof, Frank van de Mast, Paul Graeupner, Thomas Rohe, and Klaus Kornitzer "Performance of a high-NA dual-stage 193-nm TWINSCAN Step and Scan system for 80-nm applications", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485372

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KEYWORDS

Imaging systems

Photomasks

Semiconducting wafers

Control systems

Binary data

Reticles

Critical dimension metrology

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