Sputtering gas pressure on the deposition of titanium nitride thin films and their properties

Shu-ying Fu

doi:10.1117/12.867500

6 October 2010 Sputtering gas pressure on the deposition of titanium nitride thin films and their properties

Shu-ying Fu

Proceedings Volume 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 76553A (2010) https://doi.org/10.1117/12.867500
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

Titanium nitride film was grown on the substrates of silicon by magnetron sputtering. The effect on structure and performance of the TiN film at different sputtering pressure during sputtering process were studied. The result shows that the main component of the film is cubic phase Titanium nitride when changed the pressure of chamber on the condition that the other parameters keep unchanged. All of thin film crystallization display (200) crystal surface preferred orientation obviously and translate to (111) crystal surface gradually with increase of film thickness. Film thickness became thin with the increasing of the pressure. The results of the test demonstrate that the resulted films , in which no large size crystalline defect was found, was very dense , uniform and good appearance. The pressure was found to be 0.35pa, at which high quality film were grown with smoothest surface, highest degree of crystallinity and best average reflectance. It was proved that the film accurately meet the quality requirements of optical thin film.

Citation Download Citation

Shu-ying Fu "Sputtering gas pressure on the deposition of titanium nitride thin films and their properties", Proc. SPIE 7655, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 76553A (6 October 2010); https://doi.org/10.1117/12.867500

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