Advanced process control for polysilicon gate etching using integrated optical CD metrology

Gowri P. Kota; Jorge Luque; Vahid Vahedi; Ashok Khathuria; Thaddeus G. Dziura; Ady Levy

doi:10.1117/12.487635

1 July 2003 Advanced process control for poly-Si gate etching using integrated CD metrology

Gowri P. Kota, Jorge Luque, Vahid Vahedi, Ashok Khathuria, Thaddeus G. Dziura, Ady Levy

Proceedings Volume 5044, Advanced Process Control and Automation; (2003) https://doi.org/10.1117/12.487635
Event: Advanced Microelectronic Manufacturing, 2003, Santa Clara, CA, United States

Abstract

Advanced integrated metrology capability is actively being pursued in several process areas, including etch, to shorten process cycle times, enable wafer-level advanced process control (APC), and improve productivity. In this study, KLA-Tencor's scatterometry-based iSpectra Spectroscopic CD was integrated on a Lam 2300 Versys Star silicon etch system. Feed-forward control techniques were used to reduce critical dimension (CD) variation. Pre-etch CD measurements were sent to the etch system to modify the trim time and achieve targeted CDs. CDs were brought to within 1 nm from a starting CD spread of 25 nm, showing the effectiveness of this process control approach together with the advantages of spectroscopic CD metrology over conventional CD measurement techniques.

Citation Download Citation

Gowri P. Kota, Jorge Luque, Vahid Vahedi, Ashok Khathuria, Thaddeus G. Dziura, and Ady Levy "Advanced process control for poly-Si gate etching using integrated CD metrology", Proc. SPIE 5044, Advanced Process Control and Automation, (1 July 2003); https://doi.org/10.1117/12.487635

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