Research on VCSEL of single-mode multilayer photonic crystal

Wenchao Li; Zhengjun Liu; Xiaopeng Sha

doi:10.1117/12.864113

22 October 2010 Research on VCSEL of single-mode multilayer photonic crystal

Wenchao Li, Zhengjun Liu, Xiaopeng Sha

Proceedings Volume 7657, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems; 76570O (2010) https://doi.org/10.1117/12.864113
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

Vertical-Cavity Surface-Emitting Lasers (VCSEL) of single mode have the potential advantage in the domains of optical information network, routing interactions, optical information storage and data transmission for their excellent performance. However, operating on the single-mode model in the whole pumped area is not solved, which impacts the technologies and applications. In this paper, a new research on VCSEL of single mode multilayer photonic crystal is presented. In the structure of photonic crystal, defects in the horizontal direction are provided by the micro-cavity, while the AIR-KTP interface on the top and the KTP-DBR (Distributed Bragg Reflection) interface at the bottom of cavity provide the defects in the vertical direction, which form quantum defects of electron-hole pairs. The PC-VCSEL in the paper has excellent mode-selection characteristics, which can operate continuously at 850nm in single mode. The single-mode suppression ratio (SMSR) of 45dB is obtained in a wide dynamic range. The PC-VCSEL is expected to become a high-power single-mode light in the future.

Citation Download Citation

Wenchao Li, Zhengjun Liu, and Xiaopeng Sha "Research on VCSEL of single-mode multilayer photonic crystal", Proc. SPIE 7657, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Micro- and Nano-Optical Devices and Systems, 76570O (22 October 2010); https://doi.org/10.1117/12.864113

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