Analysis of titanium and vanadium oxide thin film by method of reactive co-sputtering

Tao Wang; Yadong Jiang; He Yu

doi:10.1117/12.866619

22 October 2010 Analysis of titanium and vanadium oxide thin film by method of reactive co-sputtering

Tao Wang, Yadong Jiang, He Yu

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 76581O (2010) https://doi.org/10.1117/12.866619
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

A systematic simulation based on Berg's model and theoretic study of co-reactive sputtering of titanium and vanadium targets is presented. It enables one to predict the hysteresis effect and intermediate composition of the deposited film as a function of different targets current in the co-reactive sputtering process. With this approach, it is possible to obtain different stoichiometry of thin film by choosing different ratio of vanadium target current to titanium target current. In this case, the material composition in the thin film with respect to the fraction of these two targets current can be optimized. Finally, the deposition rate of co-reactive sputtering as a function of total sputtering rate of two metal material atoms is also described.

Citation Download Citation

Tao Wang, Yadong Jiang, and He Yu "Analysis of titanium and vanadium oxide thin film by method of reactive co-sputtering", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76581O (22 October 2010); https://doi.org/10.1117/12.866619

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