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Proceedings Article

Black silicon enhanced photodetectors: a path to IR CMOS

[+] Author Affiliations
M. U. Pralle, J. E. Carey, H. Homayoon, S. Alie, J. Sickler, X. Li, J. Jiang, D. Miller, C. Palsule, J. McKee

SiOnyx Inc. (USA)

Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600N (May 03, 2010); doi:10.1117/12.849683
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From Conference Volume 7660

  • Infrared Technology and Applications XXXVI
  • Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton
  • Orlando, Florida | April 05, 2010

abstract

SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral sensitivity into the near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision capability comparable to that of current image-intensifier based night vision goggles. The process is compatible with established CMOS manufacturing infrastructure and has the promise of much lower cost than competing approaches. The measured thin layer quantum efficiency is as much as 10x that of incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.

© (2010) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

M. U. Pralle ; J. E. Carey ; H. Homayoon ; S. Alie ; J. Sickler, et al.
"Black silicon enhanced photodetectors: a path to IR CMOS", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600N (May 03, 2010); doi:10.1117/12.849683; http://dx.doi.org/10.1117/12.849683


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