Paper
8 August 2003 Light-triggered GHz-frequency current oscillations with period governed by light interference pattern
Liudvikas Subacius, Imantas Kasalynas
Author Affiliations +
Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515671
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
We propose a novel way for the formation of GHz-frequency current oscillations in nonuniformly photoexcited and dc-biased semiconductor that exhibit a negative differential resistivity. A nonuniform heating of the electron gas in presence of both light interference field and strong external dc-field induces a high-field domain structure, which then progress and moves in spatially modulated carrier plasma. As a result, the oscillations of current density appear in external circuit attached to the sample. Numerical simulations performed on a bulk GaAs crystal prove that periodicity and modulation depth of the oscillations depends on spacing and intensity of light interference pattern. An experimental possibility to induce and detect microwave pulses of GHz-frequency is demonstrated in high-resistivity GaAs sample, mounted in series with low-impedance micro-stripe line, under carrier generation by two interfering laser beams of 2-ns duration.
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Liudvikas Subacius and Imantas Kasalynas "Light-triggered GHz-frequency current oscillations with period governed by light interference pattern", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); https://doi.org/10.1117/12.515671
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KEYWORDS
Gallium arsenide

Modulation

Crystals

Semiconductors

Microwave radiation

Plasma

Carrier dynamics

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