Evalution of 193-nm alternating-aperture phase-shift mask dry etch processes

Jason Plumhoff; Chris Constantine; Jong Shin; B. Reelfs; Emmanuel Rausa; Jason M. Benz; Michael S. Hibbs; Timothy A. Brunner

doi:10.1117/12.504198

28 August 2003 Evalution of 193-nm alternating-aperture phase-shift mask dry etch processes

Jason Plumhoff, Chris Constantine, Jong Shin, B. Reelfs, Emmanuel Rausa, Jason M. Benz, Michael S. Hibbs, Timothy A. Brunner

Author Affiliations +

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504198
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

As the 193 nm generation of steppers reaches the limit of its capability, alternating aperture phase shift masks (altPSMs) are necessary to extend the lifetime of these tools. The fabrication of a production-worthy altPSM requires that the quartz dry etch satisfy many conditions. The etched quartz features must not only show excellent phase uniformity, but they should have near vertical sidewalls and good etch depth linearity across a wide range of feature sizes. Surface roughness must also be low enough that transmission is unaffected. To this end, Unaxis USA performed a series of quartz photomask dry etch experiments utilizing a Unaxis Mask Etcher III. Etch depth uniformity and etch depth linearity are studied for each experiment. SEM cross-sections of the etched profiles and AFM analysis of surface roughness are also provided. Various models were constructed by IBM that demonstrate the importance of some of the etch responses, and the results from the optimized Unaxis process will be shown.

Citation Download Citation

Jason Plumhoff, Chris Constantine, Jong Shin, B. Reelfs, Emmanuel Rausa, Jason M. Benz, Michael S. Hibbs, and Timothy A. Brunner "Evalution of 193-nm alternating-aperture phase-shift mask dry etch processes", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504198

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