Defect inspection with an EUV microscope

Stefan Herbert; Aleksey Maryasov; Larissa Juschkin; Rainer Lebert; Klaus Bergmann

doi:10.1117/12.863818

15 May 2010 Defect inspection with an EUV microscope

Stefan Herbert, Aleksey Maryasov, Larissa Juschkin, Rainer Lebert, Klaus Bergmann

Proceedings Volume 7545, 26th European Mask and Lithography Conference; 75450O (2010) https://doi.org/10.1117/12.863818
Event: 26th European Mask and Lithography Conference, 2010, Grenoble, France

Abstract

An actinic EUV microscope for defect detection on mask blanks for operation in dark field using table top discharge produced plasma (DPP) source has been developed. Several test structures (pits and bumps) and natural defects on multilayer mirrors were characterized with an atomic force microscope (AFM) and then investigated by our Schwarzschild Objective (SO) based EUV microscope. Possible defect detection limits with large field of view (FOV) and moderate magnification will be discussed in terms of required source photon flux and detection camera performance.

Citation Download Citation

Stefan Herbert, Aleksey Maryasov, Larissa Juschkin, Rainer Lebert, and Klaus Bergmann "Defect inspection with an EUV microscope", Proc. SPIE 7545, 26th European Mask and Lithography Conference, 75450O (15 May 2010); https://doi.org/10.1117/12.863818

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