Effect of deposition pressure on structural and optical properties of scandium-doped ZnO thin film prepared by sputtering

Cunxing Miao; Zhanxia Zhao; Min Li; Zhongquan Ma

doi:10.1117/12.834834

24 August 2009 Effect of deposition pressure on structural and optical properties of scandium-doped ZnO thin film prepared by sputtering

Cunxing Miao, Zhanxia Zhao, Min Li, Zhongquan Ma

Author Affiliations +

Proceedings Volume 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors; 73811G (2009) https://doi.org/10.1117/12.834834
Event: International Symposium on Photoelectronic Detection and Imaging 2009, 2009, Beijing, China

Abstract

Microstructural, optical and electrical properties of Sc-doped ZnO films grown by RF magnetron sputtering at room temperature were investigated. The deposition pressure was varied from 0.3 to 2.0 Pa. XRD spectra indicated that the (100) peak of the film weakened as the reaction pressure decreased and the (110) peak strengthened at a preferred pressure, 0.3Pa. Compare with (100) and (110) peaks, the intensity of (002) peak was relative weak. The strain in the film was investigated. The average transmittance of these films was above 90% in the wavelength range from 400 to 800 nm, while decreased in short wavelength region due to the light scattering. More significantly, various optical band gap of the films were found correspond with different pressure. The causation might be due to the Burstein-Moss effect.

Citation Download Citation

Cunxing Miao, Zhanxia Zhao, Min Li, and Zhongquan Ma "Effect of deposition pressure on structural and optical properties of scandium-doped ZnO thin film prepared by sputtering", Proc. SPIE 7381, International Symposium on Photoelectronic Detection and Imaging 2009: Material and Device Technology for Sensors, 73811G (24 August 2009); https://doi.org/10.1117/12.834834

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