Zero-bias spin separation

Vasily V. Bel'kov; Sergey D. Ganichev

doi:10.1117/12.824491

20 August 2009 Zero-bias spin separation

Vasily V. Bel'kov, Sergey D. Ganichev

Proceedings Volume 7398, Spintronics II; 73980T (2009) https://doi.org/10.1117/12.824491
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States

Abstract

Zero-bias spin separation generated by homogeneous optical excitation with terahertz radiation in quantum wells is reviewed. In gyrotropic semiconductor structures spin-dependent asymmetry of electron scattering induces a pure spin current which results in a spin separation. We consider the relaxation mechanism yielding the spin current due to the energy relaxation of a heated electron gas and the excitation mechanism caused by the scattering assisted free carrier absorption. An experimental access to these phenomena provides the application of an external magnetic field converting the spin current into a measurable net electric current. We discuss microscopic and phenomenological theory of these effects, give an overview of experimental data, and address several applications.

Citation Download Citation

Vasily V. Bel'kov and Sergey D. Ganichev "Zero-bias spin separation", Proc. SPIE 7398, Spintronics II, 73980T (20 August 2009); https://doi.org/10.1117/12.824491

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