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Proceedings Article

Green LED development in polar and non-polar growth orientation

[+] Author Affiliations
Christian Wetzel, Mingwei Zhu, Yufeng Li, Wenting Hou, Liang Zhao, Wei Zhao, Shi You, Christoph Stark, Yong Xia, Michael DiBiccari, Theeradetch Detchprohm

Rensselaer Polytechnic Institute (USA)

Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 742204 (August 18, 2009); doi:10.1117/12.829513
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From Conference Volume 7422

  • Ninth International Conference on Solid State Lighting
  • Ian T. Ferguson; Christoph Hoelen; Jianzhong Jiao; Tsunemasa Taguchi
  • San Diego, CA | August 02, 2009

abstract

The green spectral region provides a formidable challenge for energy efficient light emitting diodes. In metal organic vapor phase epitaxy we developed GaInN/GaN quantum well material suitable for 500 - 580 nm LEDs by rigorous defect reduction and thrive for alloy uniformity. We achieve best results in homoepitaxy on polar c-plane, and non-polar a -plane and m -plane bulk GaN. By the choice of crystal orientation, the dipole of piezoelectric polarization in the quantum wells can be optimized for highest diode efficiency. We report progress towards the goal of reduced efficiency droop at longer wavelengths.

© (2009) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Christian Wetzel ; Mingwei Zhu ; Yufeng Li ; Wenting Hou ; Liang Zhao, et al.
"Green LED development in polar and non-polar growth orientation", Proc. SPIE 7422, Ninth International Conference on Solid State Lighting, 742204 (August 18, 2009); doi:10.1117/12.829513; http://dx.doi.org/10.1117/12.829513


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